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| NTD20P06L Power MOSFET -60 V, -15.5 A, Single P-Channel, DPAK Features * Withstands High Energy in Avalanche and Commutation Modes * Low Gate Charge for Fast Switching * Pb-Free Packages are Available Applications V(BR)DSS -60 V http://onsemi.com ID MAX (Note 1) -15.5 A RDS(on) TYP 130 mW @ -5.0 V P-Channel D * Bridge Circuits * Power Supplies, Power Motor Controls * DC-DC Conversion MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Continuous Non-Repetitive Steady State tp v10 ms TA = 25C Symbol VDSS VGS VGSM ID Value -60 $20 $30 -15.5 A Unit V V G S MARKING DIAGRAMS 4 12 4 Drain YWW T 20P06L 2 1 3 Drain Gate Source 4 Drain 1 YWW T 20P06L 123 Gate Drain Source Publication Order Number: NTD20P06L/D Steady State TA = 25C PD IDM TJ, TSTG EAS 65 $50 -55 to 175 304 W A C mJ 3 tp = 10 ms Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A, L = 2.7 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) DPAK CASE 369C Style 2 4 TL 260 C 3 DPAK CASE 369D Style 2 20P06L Y WW Device Code = Year = Work Week 2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA RqJA Max 2.3 80 110 Unit C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2005 January, 2005 - Rev. 4 1 NTD20P06L ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) () gFS VDS(on) () VGS = -5.0 V, ID = -7.5 A VGS = -5.0 V, ID = -15 A Forward Transconductance Drain-to-Source On-Voltage VDS = -10 V, ID = -7.5 A VGS = -5.0 V, 5.0 ID = -7.5 A TJ = 25C TJ = 150C 740 VGS = 0 V, f = 1 MHz, VDS = -25 V 207 66 15 VGS = -5.0 V, VDS = -48 V, ID = -18 A 4.0 7.0 VGS = 0 V, VDS = -60 V TJ = 25C TJ = 150C VGS = 0 V, ID = -250 mA -60 -74 -64 -1.0 -10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Units Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 20 V VGS = VDS, ID = -250 mA -1.0 -1.5 3.1 0.130 0.143 11 -2.0 V mV/C 0.150 W S -1.2 -1.9 V CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -12 A VGS = 0 V IS = -15 A V, 15 TJ = 25C TJ = 150C 1.5 1.3 60 39 21 0.13 nC ns 2.5 V td(ON) tr td(OFF) tf VGS = -5.0 V, VDD = -30 V, 5.0 30 ID = -15 A, RG = 9.1 W 11 90 28 70 20 180 50 135 ns CISS COSS CRSS QG(TOT) QGS QGD 1190 300 120 26 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width v 300 ms, duty cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTD20P06L TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 40 35 -ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 VGS = -4 V VGS = -3.5 V VGS = -3 V TJ = 25C 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = -10 V VGS = -9 V VGS = -8 V VGS = -7 V VGS = -6 V -ID, DRAIN CURRENT (A) VGS = -5.5 V VGS = -5 V VGS = -4.5 V 40 TJ = -55C 30 TJ = 25C 20 TJ = 125C 10 VDS w 10 V 0 1 2 3 4 5 6 7 8 9 0 -VDS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 5 10 15 20 25 TJ = 25C TJ = -55C TJ = 125C VGS = -5 V 0.25 Figure 2. Transfer Characteristics 0.225 0.2 0.15 0.1 0.05 0 0 0.175 0.125 0.075 0.025 TJ = 25C VGS = -5 V VGS = -10 V 30 3 6 9 12 15 18 21 24 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 ID = -7.5 A VGS = -5 V 10000 VGS = 0 V TJ = 150C TJ = 125C -ID, LEAKAGE (nA) -25 0 25 50 75 100 125 150 1000 100 10 1 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Drain-to-Source Leakage Current versus Voltage NTD20P06L 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VDS = 0 V Ciss VGS = 0 V TJ = 25C C, CAPACITANCE (pF) Crss Ciss Coss Crss -10 -5 -VGS 0 -VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 7.5 -VGS, GATE-TO-SOURCE VOLTAGE (V) ID = -15 A 6.25 5.0 3.75 2.5 1.25 0 0 4 8 12 Qg, TOTAL GATE CHARGE (nC) VDS Qgs QGD QG VGS TJ = 25C 50 40 30 20 10 0 16 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 -IS, SOURCE CURRENT (A) VDD = -30 V ID = -15 A VGS = -5 V t, TIME (nS) 100 tF td(off) td(on) tR 20 VGS = 0 V TJ = 25C 15 10 10 5 1 1 10 Rg, GATE RESISTANCE (W) 100 0 0 0.25 0.5 0.75 1 1.25 1.5 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.75 Figure 9. Resistive Switching Time Variation versus Gate Resistance http://onsemi.com 4 Figure 10. Diode Forward Voltage versus Current NTD20P06L 1000 -ID, DRAIN CURRENT (A) VGS = -15 V Single Pulse TC = 25C 100 10 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) dc 1 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 350 300 250 200 150 100 50 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C) 150 ID = -15 A 100 0.1 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 0.1 Normalized to RqJA at Steady State (1 in Pad) Chip 0.0175 0.0710 0.2706 0.5776 0.7086 0.0154 F 0.01 Single Pulse 1E-02 1E-01 1E+00 t, TIME (s) 0.0854 F 0.3074 F 1.7891 F Ambient 107.55 F 1E-03 1E+01 1E+02 1E+03 Figure 13. Thermal Response http://onsemi.com 5 NTD20P06L ORDERING INFORMATION Device NTD20P06L-1 NTD20P06L NTD20P06LT4 NTD20P06L-1G NTD20P06LG NTD20P06LT4G DPAK (Pb-Free) DPAK Package Shipping 75 Units / Rail 75 Units / Rail 2500 /Tape & Reel 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD20P06L PACKAGE DIMENSIONS DPAK-3 CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD20P06L PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- S -T- SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD20P06L/D |
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